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Diamond and Related Materials

Volumn 14, Issue 8, 2005, Pages 1297-1301

Electrical characterization of p-type cubic boron nitride/n-type silicon heterojunction diodes

(3) Nose, K a Yang, H S a Yoshida, T a

a UNIVERSITY OF TOKYO (Japan)

Author keywords

Boron nitride; Diode; Heterojunction

Indexed keywords

CUBIC BORON NITRIDE; ELECTRIC POTENTIAL; ETCHING; HETEROJUNCTIONS; NANOSTRUCTURED MATERIALS; OXIDES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SPUTTER DEPOSITION; THERMAL EFFECTS; THIN FILMS; ULTRAHIGH VACUUM;

BORON NITRIDE; CARRIER CONDUCTION; RECTIFICATION RATIO; THERMAL EXCITATION;

SEMICONDUCTOR DIODES;

EID: 22844442433 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/j.diamond.2004.11.044 Document Type: Conference Paper

Times cited : (35)

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