Photoelectrochemical properties of nonpolar and semipolar GaN

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 10 A, 2007, Pages 6573-6578

  Fujii, Katsushi ^a,b   Iwaki, Yasuhiro ^a   Masui, Hisashi ^d   Baker, Troy J ^d,e   Iza, Michael ^d,e   Sato, Hitoshi ^d,e   Kaeding, John ^d,e   Yao, Takafumi ^b,c   Speck, James S ^d,e   DenBaars, Steven P ^d,e   Nakamura, Shuji ^d,e   Ohkawa, Kazuhiro ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

^d University of California   (United States)

^e UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Carrier transport; Gallium nitride; Nonpolar; Photoelectrochemistry; Semiconductor electrolyte contacts; Semipolar

Indexed keywords

CARRIER TRANSPORT; ELECTROCHEMISTRY; PHOTOCHEMICAL REACTIONS; PHOTOCURRENTS; SURFACE MORPHOLOGY;

PHOTOELECTROCHEMICAL REACTIONS; SEMICONDUCTOR-ELECTROLYTE CONTACTS;

GALLIUM NITRIDE;

EID: 35348822404     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.6573     Document Type: Article

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