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Volumn 6, Issue SUPPL. 2, 2009, Pages
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Optical and microstructural properties of semi-polar (11-22) InGaN/GaN quantum well structures
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Author keywords
[No Author keywords available]
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Indexed keywords
BLUESHIFTS;
CONTROL SAMPLES;
DISLOCATION DENSITIES;
ELECTRIC FIELD STRENGTH;
EXCITATION SPECTRUM;
INGAN/GAN;
INGAN/GAN QUANTUM WELL;
INTERNAL QUANTUM EFFICIENCY;
MICROSTRUCTURAL PROPERTIES;
MULTIPLE QUANTUM-WELL STRUCTURES;
NON-RADIATIVE RECOMBINATIONS;
PHOTOLUMINESCENCE SPECTRUM;
POLAR STRUCTURES;
QUANTUM WELL;
QUANTUM WELL EMISSION;
RADIATIVE RECOMBINATION RATE;
ROOM TEMPERATURE;
STEM-HAADF;
TEM;
WELL WIDTH;
ELECTRIC EXCITATION;
ELECTRIC FIELDS;
OPTICAL PROPERTIES;
PHOTOLUMINESCENCE;
SEMICONDUCTOR DEVICE STRUCTURES;
SEMICONDUCTOR QUANTUM WELLS;
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EID: 73349141771
PISSN: 18626351
EISSN: 16101642
Source Type: Journal
DOI: 10.1002/pssc.200880840 Document Type: Article |
Times cited : (17)
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References (9)
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