Equivalent-circuit analysis for the electroluminescence-efficiency problem of InGaN/GaN light-emitting diodes

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 1, 2008, Pages 2112-2118

  Masui, Hisashi ^a   Ive, Tommy ^b   Schmidt, Mathew C ^a   Fellows, Natalie N ^a   Sato, Hitoshi ^a   Asamizu, Hirokuni ^a   Nakamura, Shuji ^a   DenBaars, Steven P ^a  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Electroluminescence; Fermi statistics; Kinetic carrier generation; Light emitting diodes; Low temperature characteristics

Indexed keywords

CIVIL AVIATION; DIODES; ELECTRIC NETWORK ANALYSIS; ELECTROLUMINESCENCE; LEAKAGE CURRENTS; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LUMINESCENCE;

CURRENT COMPONENTS; CURRENT RANGES; ELECTROLUMINESCENCE INTENSITIES; EQUIVALENT CIRCUIT MODELS; EQUIVALENT-CIRCUIT; FERMI STATISTICS; INGAN/GAN; INTERNAL QUANTUM EFFICIENCIES; KINETIC CARRIER GENERATION; LARGE PARTS; LOW-TEMPERATURE CHARACTERISTICS; MATERIAL QUALITIES; NONRADIATIVE; NONRADIATIVE RECOMBINATIONS; OVERFLOW CURRENTS; REDUCING TEMPERATURES; TOTAL CURRENTS;

ELECTROMAGNETIC WAVES;

EID: 42549169148     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2112     Document Type: Article

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