The influence of acceptor anneal temperature on the performance of InGaN/GaN quantum well light-emitting diodes

Journal of Applied Physics

Volumn 99, Issue 2, 2006, Pages

  Thomson, J D ^a   Pope, I A ^a   Smowton, P M ^a   Blood, P ^a   Lynch, R J ^b   Hill, G ^b   Wang, T ^b   Parbrook, P ^b  

^a CARDIFF UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DONOR ATOMS; ELECTRICALLY ACTIVATED ACCEPTORS; ELECTRON DRIFT LEAKAGE; SHOCKLEY-REED-HALL RECOMBINATION;

ABSORPTION; ANNEALING; COMPUTER SIMULATION; CURRENT DENSITY; GALLIUM NITRIDE; HOLE MOBILITY; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; THERMAL EFFECTS;

LIGHT EMITTING DIODES;

EID: 31644447291     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2165405     Document Type: Article

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