Electron tomography of III-V quantum dots using dark field 002 imaging conditions

Journal of Microscopy

Volumn 237, Issue 2, 2010, Pages 148-154

  Beanland, R ^a   SAnchez A M ^b   Hernandez Garrido, J C ^a   Wolf, D ^c   Midgley, P A ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b Campus de Puerto Real   (Spain)

^c DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

III V semiconductors; InAs GaAs; Quantum dot; TEM; Tomography

Indexed keywords

ELECTRIC IMPEDANCE TOMOGRAPHY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INDIUM ARSENIDE; NANOCRYSTALS; NARROW BAND GAP SEMICONDUCTORS; SEMICONDUCTOR QUANTUM DOTS;

3D MODELS; 3D-MODELING; DARK-FIELD; DATA SET; ELECTRON TOMOGRAPHY; III/V SEMICONDUCTORS; IMAGING CONDITIONS; INAS/GAAS; QUANTUM DOT; TEM;

III-V SEMICONDUCTORS;

QUANTUM DOT;

ARTICLE; CONTRAST ENHANCEMENT; DIFFRACTION; ELECTRON TOMOGRAPHY; IMAGE QUALITY; ORIENTATION; PRIORITY JOURNAL; SENSITIVITY AND SPECIFICITY; THICKNESS; THREE DIMENSIONAL IMAGING; TOMOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 75149195352     PISSN: 00222720     EISSN: 13652818     Source Type: Journal    
DOI: 10.1111/j.1365-2818.2009.03318.x     Document Type: Article

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