Device characteristics of self-assembled InAs/GaAs quantum dot infrared photodetectors

Journal of the Korean Physical Society

Volumn 42, Issue 3, 2003, Pages 418-422

  Kang, S K ^a   Lee, S J ^a   Lee, J I ^a   Kim, M D ^a   Noh, S K ^a   Kang, Y H ^b   Lee, U H ^b   Hong, S C ^b   Kim, H S ^c   Park, C G ^c  

^a Korea Research Institute of Standards and Science   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Indium arsenide; Infrared photodetector; Quantum dot; Responsivity

Indexed keywords

EID: 0037357661     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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