Recent advances in electron tomography: TEM and HAADF-STEM tomography for materials science and semiconductor applications

Microscopy and Microanalysis

Volumn 11, Issue 5, 2005, Pages 378-400

  Kübel, Christian ^a,e   Voigt, Andreas ^a   Schoenmakers, Remco ^a   Otten, Max ^a   Su, David ^b   Lee, Tan Chen ^b   Carlsson, Anna ^c   Bradley, John ^d  

^a Thermo Fisher Scientific   (United States)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c HALDOR TOPSØE A S   (Denmark)

^d Lawrence Livermore National Laboratory   (United States)

^e FRAUNHOFER INSTITUTE FOR MANUFACTURING TECHNOLOGY AND ADVANCED MATERIALS IFAM   (Germany)

Author keywords

3D imaging; Catalyst; Electron tomography; High angle annular dark field scanning transmission electron microscopy (HAADF STEM); Semiconductor devices; Transmission electron microscopy (TEM)

Indexed keywords

CATALYSIS; CONFERENCE PAPER; METHODOLOGY; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SEMICONDUCTOR; THREE DIMENSIONAL IMAGING; TRANSMISSION ELECTRON MICROSCOPY;

CATALYSIS; IMAGING, THREE-DIMENSIONAL; MICROSCOPY, ELECTRON, SCANNING TRANSMISSION; MICROSCOPY, ELECTRON, TRANSMISSION; SEMICONDUCTORS;

EID: 28744449393     PISSN: 14319276     EISSN: 14358115     Source Type: Journal    
DOI: 10.1017/S1431927605050361     Document Type: Conference Paper

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