Controlling the shape of InAs self-assembled quantum dots by thin GaAs capping layers

Journal of Crystal Growth

Volumn 251, Issue 1-4, 2003, Pages 155-160

  Takehana, K ^a,b   Pulizzi, F ^a   Patane A ^a   Henini, M ^a   Main, P C ^a   Eaves, L ^a   Granados, D ^c   Garcia, J M ^c  

^a UNIVERSITY OF NOTTINGHAM   (United Kingdom)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

Author keywords

A1. Atomic force microscopy; A1. Morphology; A3. Quantum dots; A3. Quantum rings

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DIFFUSION; ELECTRONS; MORPHOLOGY; RESONANT TUNNELING; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SURFACES; THERMAL EFFECTS;

CAPPING LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037382745     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(02)02407-7     Document Type: Conference Paper

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