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Volumn 33, Issue 6, 1998, Pages 684-688

Ge(Si) ordering on a double-layer, stepped Si(Ge)(001) surface

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0011145647     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (5)

References (24)
  • 21
    • 18844421093 scopus 로고    scopus 로고
    • note
    • Our model in which the compositional ordering occurs along the direction of the dimer row reproduces the alloy formation of D and H in Fig. 3(d) of Ref. 4 although the kink flow growth proceeds along the direction of the step edge, i.e., the [110] direction in Fig. 3 of Ref. 4.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.