A technique for the measurement of surface diffusion coefficient and activation energy of Ge adatom on Si(001)

Journal of Applied Physics

Volumn 95, Issue 11 I, 2004, Pages 6065-6071

  Kim, H J ^a   Zhao, Z M ^a   Liu, J ^a   Ozolins, V ^a   Chang, J Y ^a,b   Xie, Y H ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ADATOMS; HETEROEPITAXY; SELF-ASSEMBLED QUANTUM DOTS (SAQD); SURFACE DIFFUSION;

ACTIVATION ENERGY; CHEMICAL ANALYSIS; COMPUTER SIMULATION; DIFFUSION; DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; MOLECULAR DYNAMICS; MONTE CARLO METHODS; NUCLEATION; SELF ASSEMBLY; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS; SURFACE TREATMENT;

SEMICONDUCTING GERMANIUM;

EID: 2942659777     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1711175     Document Type: Article

References (22)

1. J. Drucker and S. Chaparro, Appl. Phys. Lett. 71, 614 (1997).
2. T. I. Kamins and R. S. Williams, Appl. Phys. Lett. 71, 1201 (1997).
3. D. Srivastava and B. Garrison, Phys. Rev. B 46, 1472 (1992).
4. C. Roland and G. H. Gilmer, Phys. Rev. B 47, 16286 (1993).
5. C. E. Allen, R. Ditchfield, and E. G. Seebauer, Phys. Rev. B 55, 13304 (1997).
6. V. Milman, D. E. Jesson, J. Pennycook, M. C. Payne, M. H. Lee, and I. Stich, Phys. Rev. B 50, 2663 (1994).
7. R. Kariotis and M. G. Lagally, J. Vac. Sci. Technol. B 7, 269 (1989).
8. M. Tomellini and M. Fanfoni, Curr. Opin. Solid State Mater. Sci. 5, 91 (2001).
9. M. I. Larsson, R. F. Sabiryanov, K. Cho, and B. M. Clemens, J. Appl. Phys. 94, 3470 (2003).
10. A. van de Walle, M. Asta, and P. W. Voorhees, Phys. Rev. B 67, 41308 (2003).
11. Y.-M. Mo, J. Kleiner, M. B. Webb, and M. G. Lagally, Surf. Sci. 268, 275 (1992).
12. M. Zinke-Allmang, L. C. Feldman, and M. H. Grabow, Surf. Sci. 200, L427 (1988).
13. H. J. Kim, Z. M. Zhao, and Y. H. Xie, Phys. Rev. B 68, 205312 (2003).
14. H. J. Kim and Y. H. Xie, Appl. Phys. Lett. 79, 263 (2001).
15. Y. H. Xie, S. B. Samavedam, M. Bulsara, T. A. Langdo, and E. A. Fitzgerald, Appl. Phys. Lett. 71, 3567 (1997).
16. F. M. Ross, J. Tersoff, and R. M. Tromp, Phys. Rev. Lett. 80, 984 (1998).
17. K. N. Tu, J. W. Mayer, and L. C. Feldman, in Electronic Thin Film Science for Electrical Engineers and Materials Scientists (Macmillan, New York, 1992).
18. Y.-W. Mo and M. G. Lagally, Surf. Sci. 248, 313 (1991).
19. S. Yu. Shiryaev, F. Jensen, J. Lundsgaard Hansen, J. Wulff Petersen, and A. Nylandsted Larsen, Phys. Rev. Lett. 78, 503 (1997).
20. T. I. Kamins, G. Medeiros-Ribeiro, D. A. A. Ohlberg, and R. S. Wiliams, J. Appl. Phys. 85, 1159 (1999).
21. H.-J. Gossmann and G. J. Fisanick, J. Vac. Sci. Technol. A 6, 2037 (1987).
22. M. Zinke-Allmang and S. Stoyanov, Jpn. J. Appl. Phys., Part 2 29, L1884 (1990).