Fabrication of high-electron-mobility ZnO epilayers by chemical vapor deposition using catalytically produced excited water

Journal of Crystal Growth

Volumn 312, Issue 4, 2010, Pages 483-486

  Nishiyama, Hiroshi ^a   Miura, Hitoshi ^a   Yasui, Kanji ^a   Inoue, Yasunobu ^a  

^a NAGAOKA UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

A3. Catalytic processes; A3. Chemical vapor deposition processes; A3. Hot water; A3. Thin film; B1. Oxides; B2. Semiconducting materials

Indexed keywords

A3.THIN FILM; CATALYTIC PROCESS; CHEMICAL VAPOR DEPOSITION PROCESS; HOT WATER; SEMICONDUCTING MATERIALS;

CHEMICAL BEAM EPITAXY; COMMUNICATION CHANNELS (INFORMATION THEORY); CRYSTAL STRUCTURE; DIFFRACTION; ELECTRON MOBILITY; ENERGY CONSERVATION; EPILAYERS; EPITAXIAL GROWTH; FABRICATION; HOLOGRAPHIC INTERFEROMETRY; METALLIC COMPOUNDS; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PLATINUM; PULSED LASER APPLICATIONS; SINGLE CRYSTALS; THIN FILM DEVICES; THIN FILMS; WATER VAPOR; ZINC; ZINC OXIDE;

CHEMICAL VAPOR DEPOSITION;

EID: 74549205947     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.11.041     Document Type: Article

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