Effects of ZnO/MgO double buffer layers on structural quality and electron mobility of ZnO epitaxial films grown on c-plane sapphire

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 11 A, 2002, Pages

  Miyamoto, Kazuhiro ^a   Sano, Michihiro ^a   Kato, Hiroyuki ^a   Yao, Takafumi ^b  

^a STANLEY ELECTRIC CO LTD   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

C sapphire; Dislocation scattering; Electron mobility; Plasma assisted molecular beam epitaxy; Secondary ion mass spectroscopy; X ray diffraction; ZnO; ZnO MgO double buffer layer

Indexed keywords

CRYSTAL STRUCTURE; DISLOCATIONS (CRYSTALS); ELECTRON MOBILITY; MAGNESIA; MOLECULAR BEAM EPITAXY; SAPPHIRE; SECONDARY ION MASS SPECTROMETRY; X RAY DIFFRACTION;

DISLOCATION SCATTERING; DOUBLE BUFFER LAYERS; PLASMA ASSISTED MOLECULAR BEAM EPITAXY;

ZINC OXIDE;

EID: 0036869194     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l1203     Document Type: Letter

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