Lateral grain size and electron mobility in ZnO epitaxial films grown on sapphire substrates

Journal of Crystal Growth

Volumn 214, Issue , 2000, Pages 284-288

  Ohtomo, A ^a   Kimura, H ^a   Saito, K ^b   Makino, T ^c   Segawa, Y ^c   Koinuma, H ^a,d   Kawasaki, M ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c RIKEN   (Japan)

^d JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; EMISSION SPECTROSCOPY; EXCITONS; GRAIN SIZE AND SHAPE; LASER APPLICATIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SINGLE CRYSTALS; THIN FILMS; ZINC OXIDE;

LASER MOLECULAR BEAM EPITAXY; LATERAL GRAIN SIZE; MOSAICNESS; X RAY RECIPROCAL SPACE MAPPING; ZINC OXIDE FILMS;

FILM GROWTH;

EID: 0033691699     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00093-2     Document Type: Article

References (9)

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