Epitaxial growth and polarity of ZnO films on sapphire (0001) substrates by low-pressure metal organic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 4 B, 2003, Pages 2291-2295

  Zhang, Bao Ping ^a,b   Manh, Le Hong ^a   Wakatsuki, Katsuki ^b   Ohnishi, Tsuyoshi ^c   Lippmaa, Mikk ^c   Usami, Noritaka ^b   Kawasaki, Masashi ^a   Segawa, Yusaburo ^a,b  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

Accept or; Low pressure growth; MOCVD; MOVPE; Orientation; Photoluminescence; Polarity; Reflection; ZnO

Indexed keywords

EPITAXIAL GROWTH; EXCITONS; FILM GROWTH; LASER APPLICATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SPECTROSCOPY; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

ACCEPTOR; COAXIAL IMPACT COLLISION ION SCATTERING SPECTROSCOPY; DIETHYL ZINC; EXCITON EMISSION; LOW PRESSURE METAL ORGANIC VAPOR DEPOSITION;

SAPPHIRE;

EID: 0037671893     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.2291     Document Type: Article

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