Metalorganic vapor phase epitaxy of ZnO: Towards p-type conductivity

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6474, Issue , 2007, Pages

  Heinze, S ^a   Dadgar, A ^a   Bertram, F ^a   Krtschil, A ^a   Blasing J ^a   Witte, H ^a   Tiefenau, S ^a   Hempel, T ^a   Diez, A ^a   Christen, J ^a   Krost, A ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

Annealing; Arsenic; Homoepitaxy; MOVPE; Nitrogen; P doping; ZnO

Indexed keywords

ARSENIC; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; SCALABILITY;

COMPOUND SEMICONDUCTORS; HIGH LAYER QUALITY; MASS PRODUCTION;

ZINC OXIDE;

EID: 34248660250     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.715018     Document Type: Conference Paper

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