Degenerate layers in epitaxial ZnO films grown on sapphire substrates

Applied Physics Letters

Volumn 84, Issue 22, 2004, Pages 4412-4414

  Tampo, H ^a   Yamada, A ^a   Fons, P ^a   Shibata, H ^a   Matsubara, K ^a   Iwata, K ^a   Niki, S ^a   Nakahara, K ^b   Takasu, H ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b ROHM CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; COMPUTER SIMULATION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; FILM GROWTH; HALL EFFECT; MOLECULAR BEAM EPITAXY; NUCLEATION; SAPPHIRE; SUBSTRATES; ZINC OXIDE;

EPITAXIAL FILMS; SURFACE MIGRATION; VACUUM ANNEALING;

OPTICAL FILMS;

EID: 3042743999     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1758295     Document Type: Article

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