Properties of ZnO films grown on (0 0 0 1) sapphire substrate using H2O and N2O as O precursors by atmospheric pressure MOCVD

Journal of Crystal Growth

Volumn 290, Issue 2, 2006, Pages 426-430

  Dai, Jiangnan ^a   Su, Hongbo ^a   Wang, Li ^a   Pu, Yong ^a   Fang, Wenqing ^a   Jiang, Fengyi ^a  

^a NANCHANG UNIVERSITY   (China)

Author keywords

A1. AFM; A1. Photoluminescence; A1. X ray diffraction; A3. MOCVD; B1. ZnO

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLINE MATERIALS; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; NITROGEN OXIDES; PHONONS; PHOTOLUMINESCENCE; SAPPHIRE; THIN FILMS; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

AFM; ATMOSPHERIC PRESSURE METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (AP-MOCVD); DOUBLE-CRYSTAL X-RAY DIFFRACTOMETRY (DCXRD); FULL-WIDTH AT HALF-MAXIMUM (FWHM);

CRYSTAL GROWTH;

EID: 33747804381     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.01.009     Document Type: Article

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