Influence of growth parameters and thickness of AlN spacer on electrical properties of AlGaN/AlN/GaN high-electron-mobility transistors grown on 4-inch Si substrate

Japanese Journal of Applied Physics

Volumn 48, Issue 11, 2009, Pages

  Tan, Shuxin ^a   Suzue, Takaaki ^a   Selvaraj, S Lawrence ^a   Egawa, Takashi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

4-IN. SI; ALGAN; ALGAN/ALN/GAN; ALN; DIFFERENT THICKNESS; ELECTRICAL PROPERTY; GAN GROWTH; GROWTH CONDITIONS; GROWTH PARAMETERS; HALL MEASUREMENTS; HETEROSTRUCTURES; HIGH MOBILITY; INTERFACE ROUGHNESS; MAXIMUM CURRENT DENSITY; OPTIMUM PROPERTIES; PIEZO-ELECTRIC FIELDS; SI SUBSTRATES;

DRAIN CURRENT; ELECTRIC PROPERTIES; GALLIUM NITRIDE; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; SURFACE STRUCTURE; TENSILE STRAIN;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 73849133707     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.111002     Document Type: Article

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