Modulated precursor flow epitaxial growth of AlN layers on native AlN substrates by metal-organic chemical vapor deposition

Applied Physics Letters

Volumn 93, Issue 2, 2008, Pages

  Kim, Hee Jin ^a   Choi, Suk ^a   Yoo, Dongwon ^a,c   Ryou, Jae Hyun ^a   Dupuis, Russell D ^a,d   Dalmau, R F ^b   Lu, P ^b   Sitar, Z ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b North Carolina State University   (United States)

^c Philips Lumileds Lighting Company   (United States)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; CRYSTALLOGRAPHY; ECOLOGY; EPITAXIAL LAYERS; FINITE DIFFERENCE METHOD; FINITE ELEMENT METHOD; INDUSTRIAL CHEMICALS; ION BEAM ASSISTED DEPOSITION; METALLIZING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; MOLECULAR BEAM EPITAXY; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; RESISTORS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; VAPOR DEPOSITION; VAPORS;

ALN LAYERS; ALN SUBSTRATES; ALN-LAYER GROWN; AMERICAN INSTITUTE OF PHYSICS (AIP); BULK ALN; BULK SUBSTRATES; CONVENTIONAL GROWTH; FINITE ELEMENT (FE); FREE SURFACES; LINE-WIDTHS; METAL ORGANIC (MO); METAL-ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); MORPHOLOGY CHANGES; PRECURSOR FLOW; SAPPHIRE SUBSTRATES; SET-POINT TEMPERATURES; X-RAY ROCKING CURVE (XRC);

EPITAXIAL GROWTH;

EID: 47549091723     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2959064     Document Type: Article

References (22)

1. S. Arulkumaran, M. Sakai, T. Egawa, H. Ishikawa, T. Jimbo, T. Shibata, K. Asai, S. Sumiya, Y. Kuraoka, M. Tanaka, and O. Oda, Appl. Phys. Lett. 81, 1131 (2002).
2. Y. Taniyasu, M. Kasu, and T. Makimoto, Nature (London) 441, 325 (2006).
3. C. H. Chen, H. Liu, D. Steigerwald, W. Imler, C. P. Kuo, M. G. Craford, M. Ludowise, S. Lester, and J. Amano, J. Electron. Mater. 25, 1004 (1996).
4. Y. Ohba and A. Hatano, Jpn. J. Appl. Phys., Part 2 35, L1013 (1996).
5. M. Imura, K. Nakano, T. Kitano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, K. Shimono, T. Noro, T. Takagi, and A. Bandoh, Phys. Status Solidi A 203, 1626 (2006).
6. J. Han, J. J. Figiel, M. H. Crawford, M. A. Banas, M. E. Bartram, R. M. Biefeld, Y. K. Song, and A. V. Nurmikko, J. Cryst. Growth 195, 291 (1998).
7. W. G. Jeong, E. P. Menu, and D. P. Dapkus, Appl. Phys. Lett. 55, 244 (1989).
8. M. A. Khan, J. N. Kuznia, R. A. Skogman, D. T. Olson, M. M. Millan, and W. J. Choyke, Appl. Phys. Lett. 61, 2539 (1992).
9. Y. Horikoshi, Semicond. Sci. Technol. 8, 1032 (1993).
10. Y. Ohba and R. Sato, J. Cryst. Growth 221, 258 (2000).
11. Q. Paduano and D. Weyburne, Jpn. J. Appl. Phys., Part 1 42, 1590 (2003).
12. W. H. Sun, J. P. Zhang, J. W. Yang, H. P. Maruska, M. Asif Khan, R. Liu, and F. A. Ponce, Appl. Phys. Lett. 87, 211915 (2005).
13. Z. Chen, R. S. Qhalid Fareed, M. Gaevski, V. Adivarahan, J. W. Yang, M. Asif Khan, J. Mei, and F. A. Ponce, Appl. Phys. Lett. 89, 081905 (2006).
14. D. Zhuang, Z. G. Herro, R. Schlesser, and Z. Sitar, J. Cryst. Growth 287, 372 (2006).
15. Z. G. Herro, D. Zhuang, R. Schlesser, R. Collazo, and Z. Sitar, J. Cryst. Growth 286, 205 (2006).
16. Y. Koide, N. Itoh, K. Itoh, N. Sawaki, and I. Akasaki, Jpn. J. Appl. Phys., Part 1 27, 1156 (1988).
17. V. Noveski, R. Schlesser, S. Mahajan, S. Beaudoin, and Z. Sitar, J. Cryst. Growth 264, 369 (2004).
18. V. Noveski, R. Schlesser, S. Mahajan, S. Beaudoin, and Z. Sitar, MRS Internet J. Nitride Semicond. Res. 9, 2 (2004).
19. G. A. Slack, R. A. Tanzilli, R. O. Pohl, and J. W. Vandersande, J. Phys. Chem. Solids 48, 641 (1987).
20. F. P. Incropera and D. P. De Witt, Fundamentals of Heat and Mass Transfer (Wiley, New York, 1981).
21. N. B. Vargaftik, Y. K. Vinogradov, and V. S. Yargin, Handbook of Physical Properties of Liquids and Gases (Begell House, New York, 1996).
22. S. Choi, H. J. Kim, J.-H. Ryou, and R. D. Dupuis (unpublished).