AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 835-839

  Wang, Xiaoliang ^a   Hu, Guoxin ^a   Ma, Zhiyong ^a   Ran, Junxue ^a   Wang, Cuimei ^a   Xiao, Hongling ^a   Tang, Jian ^a   Li, Jianping ^a   Wang, Junxi ^a   Zeng, Yiping ^a   Li, Jinmin ^a   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. 2DEG; A3. MOCVD; B1. AlGaN GaN; B3. HEMT; B3. Power device

Indexed keywords

CARRIER CONCENTRATION; CURRENT DENSITY; ELECTRIC PROPERTIES; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE; SILICON WAFERS; TRANSCONDUCTANCE;

GAN; POWER ADDED EFFICIENCY (PAE); SHEET RESISTANCE; SIC;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33846447807     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.10.219     Document Type: Article

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