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Volumn 289, Issue 1, 2006, Pages 72-75

Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition

Author keywords

A1. Growth rate; A1. Parasitic reaction; A3. MOCVD; B1. AlN

Indexed keywords

ALUMINUM NITRIDE; COMPOSITION; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NITROGEN COMPOUNDS; THERMAL EFFECTS;

ALGAN ALLOY LAYERS; GROWTH RATE; PARASITIC REACTION; REACTOR PRESSURE;

CRYSTAL GROWTH;

EID: 33244464941 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.11.083 Document Type: Article

Times cited : (108)

References (12)

1
- 19744383134
- R. McClintock, K. Mayes, A. Yasan, D. Shiell, P. Kung, and M. Razeghi Appl. Phys. Lett. 86 2005 011117
- (2005) Appl. Phys. Lett. , vol.86 , pp. 011117
- McClintock, R.¹ Mayes, K.² Yasan, A.³ Shiell, D.⁴ Kung, P.⁵ Razeghi, M.⁶

2
- 15944412078
- C.F. Shih, M.Y. Keh, Y.N. Wang, N.C. Chen, C.-A. Chang, P.H. Chang, and K.S. Liu J. Crystal Growth 277 2005 44
- (2005) J. Crystal Growth , vol.277 , pp. 44
- Shih, C.F.¹ Keh, M.Y.² Wang, Y.N.³ Chen, N.C.⁴ Chang, C.-A.⁵ Chang, P.H.⁶ Liu, K.S.⁷

3
- 9944260269
- A.V. Kondratyev, R.A. Talalaev, W.V. Lundin, A.V. Sakharov, A.V. Tsatsulnikov, E.E. Zavarin, A.V. Fomin, and D.S. Sizov J. Crystal Growth 272 2004 420
- (2004) J. Crystal Growth , vol.272 , pp. 420
- Kondratyev, A.V.¹ Talalaev, R.A.² Lundin, W.V.³ Sakharov, A.V.⁴ Tsatsulnikov, A.V.⁵ Zavarin, E.E.⁶ Fomin, A.V.⁷ Sizov, D.S.⁸

4
- 0032477187
- F. Nakamura, S. Hashimoto, M. Hara, S. Imanaga, M. Ikeda, and H. Kawai J. Crystal Growth 195 1998 280
- (1998) J. Crystal Growth , vol.195 , pp. 280
- Nakamura, F.¹ Hashimoto, S.² Hara, M.³ Imanaga, S.⁴ Ikeda, M.⁵ Kawai, H.⁶

5
- 0036845435
- S. Kim, J. Seo, K. Lee, H. Lee, K. Park, Y. Kim, and C.-S. Kim J. Crystal Growth 245 2002 247
- (2002) J. Crystal Growth , vol.245 , pp. 247
- Kim, S.¹ Seo, J.² Lee, K.³ Lee, H.⁴ Park, K.⁵ Kim, Y.⁶ Kim, C.-S.⁷

6
- 0346154900
- J. Randall Creighton, G.T. Wang, W.G. Breiland, and M.E. Coltrin J. Crystal Growth 261 2004 204
- (2004) J. Crystal Growth , vol.261 , pp. 204
- Randall Creighton, J.¹ Wang, G.T.² Breiland, W.G.³ Coltrin, M.E.⁴

7
- 0000267358
- S. Ruffenach-Clur, O. Briot, J.L. Rouviere, B. Gil, and R.L. Aulombard Mater. Sci. Eng. B 50 1997 219
- (1997) Mater. Sci. Eng. B , vol.50 , pp. 219
- Ruffenach-Clur, S.¹ Briot, O.² Rouviere, J.L.³ Gil, B.⁴ Aulombard, R.L.⁵

8
- 0030156733
- C.H. Chen, H. Liu, D. Steigerwald, W. Imler, C.P. Kuo, M.G. Craford, M. Ludowise, S. Lester, and J. Amano J. Electron. Mater. 25 1996 1004
- (1996) J. Electron. Mater. , vol.25 , pp. 1004
- Chen, C.H.¹ Liu, H.² Steigerwald, D.³ Imler, W.⁴ Kuo, C.P.⁵ Craford, M.G.⁶ Ludowise, M.⁷ Lester, S.⁸ Amano, J.⁹

9
- 4944250116
- D.G. Zhao, J.J. Zhu, Z.S. Liu, S.M. Zhang, H. Yang, and D.S. Jiang Appl. Phys. Lett. 85 2004 1499
- (2004) Appl. Phys. Lett. , vol.85 , pp. 1499
- Zhao, D.G.¹ Zhu, J.J.² Liu, Z.S.³ Zhang, S.M.⁴ Yang, H.⁵ Jiang, D.S.⁶

10
- 0032477106
- J. Han, J.J. Figiel, M.H. Crawford, M.A. Banas, M.E. Bartram, R.M. Biefeld, Y.K. Song, and A.V. Nurmikko J. Crystal Growth 195 1998 291
- (1998) J. Crystal Growth , vol.195 , pp. 291
- Han, J.¹ Figiel, J.J.² Crawford, M.H.³ Banas, M.A.⁴ Bartram, M.E.⁵ Biefeld, R.M.⁶ Song, Y.K.⁷ Nurmikko, A.V.⁸

11
- 0032477164
- T.G. Mihopoulos, V. Gupta, and K.F. Jensen J. Crystal Growth 195 1998 733
- (1998) J. Crystal Growth , vol.195 , pp. 733
- Mihopoulos, T.G.¹ Gupta, V.² Jensen, K.F.³

12
- 0000167446
- K. Nakamura, O. Makino, A. Tachibana, and K. Matsumoto J. Organometallic Chem. 611 2000 514
- (2000) J. Organometallic Chem. , vol.611 , pp. 514
- Nakamura, K.¹ Makino, O.² Tachibana, A.³ Matsumoto, K.⁴

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