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Volumn 9, Issue 11, 2009, Pages 3877-3882

Phosphorus doped Zn 1-xMg xO nanowire arrays

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR LEVELS; BAND GAP ENGINEERING; CONTROLLABLE CONDUCTIVITIES; ELECTRICAL DEVICES; HIGH EFFICIENCY; NANOWIRE ARRAYS; P-TYPE; PHOSPHORUS-DOPED; POTENTIAL APPLICATIONS; TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE; ZNO; ZNO FILMS; ZNO NWS;

EID: 72849110660     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl902067a     Document Type: Article
Times cited : (64)

References (50)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.