Growth and characterization of phosphorous doped {111} homoepitaxial diamond thin films

Applied Physics Letters

Volumn 71, Issue 8, 1997, Pages 1065-1067

  Koizumi, S ^a   Kamo, M ^a   Sato, Y ^a   Ozaki, H ^b   Inuzuka, T ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b AOYAMA GAKUIN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000456470     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119729     Document Type: Article

References (12)

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