Phase evolution in aluminum nitride thin films on Si(100) prepared by radio frequency magnetron sputtering

Thin Solid Films

Volumn 384, Issue 2, 2001, Pages 166-172

  Choi, Jae Hyoung ^a   Lee, Jeong Yong ^a   Kim, Jin Hyeok ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Chonnam National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; ELECTRON DIFFRACTION; FILM PREPARATION; INTERFACES (MATERIALS); MAGNETRON SPUTTERING; POLYCRYSTALLINE MATERIALS; SILICON; SPUTTER DEPOSITION; THIN FILMS;

ALUMINUM NITRIDE; PHASE EVOLUTION; RADIO FREQUENCY MAGNETRON SPUTTERING; SELECTED AREA ELECTRON DIFFRACTION;

DIELECTRIC FILMS;

EID: 0034818315     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01859-9     Document Type: Article

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