High-frequency surface acoustic wave devices based on AlN/diamond layered structure realized using e-beam lithography

Journal of Applied Physics

Volumn 101, Issue 11, 2007, Pages

  Assouar, M B ^a   Elmazria, O ^a   Kirsch, P ^a   Alnot, P ^a   Mortet, V ^b   Tiusan, C ^a  

^a INSTITUT JEAN LAMOUR   (France)

^b HASSELT UNIVERSITY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DIAMONDS; ELECTRIC CONDUCTIVITY; ELECTRON BEAM LITHOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

ACOUSTIC PROPAGATION LOSSES; ELECTROMECHANICAL COUPLING COEFFICIENT; SAW DEVICES;

ACOUSTIC SURFACE WAVE DEVICES;

EID: 34250671205     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2739218     Document Type: Article

References (22)

1. K. Yamanouchi, N. Sakurai, and T. Satoh, Proc.-IEEE Ultrason. Symp. 1, 351 (1989).
2. H. Nakahata, K. Higaki, S. Fujii, A. Hachigo, H. Kitabayashi, K. Tanabe, Y. Seki, and S. Shikata, Proc.-IEEE Ultrason. Symp. 361 (1995).
3. T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher, and C. Prieto, Mater. Sci. Eng., B 0921-5107 10.1016/S0921-5107(02)00022-3 93, 154 (2002).
4. V. Mortet, O. Elmazria, M. Nesladek, M. B. Assouar, G. Vanhoyland, J. D'Haen, M. D'Olieslaeger, and P. Alnot, Appl. Phys. Lett. 81, 1720 (2002).
5. M. Pereira da Cunha, E. L. Adler, and D. C. Malocha, Proc.-IEEE Ultrason. Symp. 283 (2000).
6. G. F. Iriarte, J. Appl. Phys. 0021-8979 10.1063/1.1574172 93, 9604 (2003).
7. P. Kirsch, M. B. Assouar, O. Elmazria, V. Mortet, and P. Alnot, Appl. Phys. Lett. 0003-6951 10.1063/1.2208372 88, 223504 (2006).
8. O. Elmazria, M. El Hakiki, V. Mortet, M. B. Assouar, L. Bouvot, M. Nesladek, M. Vanecek, P. Bergonzo, M. D'Olieslaeger, and P. Alnot, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 51, 1704 (2004).
9. M. Benetti, D. Cannat̀, F. Di Pietrantonio, and E. Verona, Proc.-IEEE Ultrason. Symp. 1738 (2003).
10. A. Hachigo, H. Nakahata, K. Itakura, S. Fujii, and S. Shikata, Proc.-IEEE Ultrason. Symp. 325 (1999).
11. G. F. Iriarte, F. Engelmark, I. V. Katardjiev, V. Plessky, and V. Yantchev, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 0885-3010 10.1109/TUFFC.2003.1251137 50, 1542 (2003).
12. H. Hatakeyama, T. Omori, K. -Y. Hashimoto, and M. Yamaguchi, IEEE Trans. Int. Ultrason. Ferroelectr. Freq. Control Joint 50th Anniversary Conference, 1896 (2004).
13. T. Palacios, F. Calle, E. Monroy, and E. Muoz, J. Vac. Sci. Technol. B 1071-1023 10.1116/1.1508820 20, 2071 (2002).
14. V. Mortet, O. Elmazria, M. Nesládek, M. Elhakiki, G. Vanhoyland, J. d'Haen, M. d'Olieslaeger, and P. Alnot, Phys. Status Solidi A 0031-8965 10.1002/pssa.200303821 199, 145 (2003).
15. M. B. Assouar, M. El Hakiki, O. Elmazria, P. Alnot, and C. Tiusan, Diamond Relat. Mater. 0925-9635 10.1016/j.diamond.2003.11.064 13, 1111 (2004).
16. P. Kirsch, M. B. Assouar, O. Elmazria, C. Tiusan, and P. Alnot, Proc. IEEE Int. Symp. Appl. Ferroelectr. 2293 (2006).
17. C. M. Flannery and H. Von Kiedrowski, Ultrasonics 40, 83 (2002).
18. T. Shiosaki, Y. Mikamura, F. Tadeka, and A. Kawabata, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 33, 324 (1986). 0885-3010
19. H. Nakahata, H. Kitabayashi, S. Fujii, K. Higaki, K. Tanabe, Y. Seki, and S. Shikata, Proc.-IEEE Ultrason. Symp. 285 (1996).
20. S. Ono, K. Wasa, and S. Hayakawa, Wave Electron. 3, 35 (1977).
21. M. -A. Dubois and P. Muralt, Appl. Phys. Lett. 0003-6951 10.1063/1.124055 74, 3032 (1999).
22. K. Nakamura, H. Sasaki, and H. Shimizu, Electron. Lett. 17, 507 (1981).