Epitaxial lateral overgrowth of AlN layers on patterned sapphire substrates

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 7, 2006, Pages 1632-1635

  Nakano, K ^a   Imura, M ^a   Narita, G ^a   Kitano, T ^a   Hirose, Y ^a   Fujimoto, N ^a   Okada, N ^a   Kawashima, T ^a   Iida, K ^a   Balakrishnan, K ^a   Tsuda, M ^a,b   Iwaya, M ^a   Kamiyama, S ^a   Amano, H ^a   Akasaki, I ^a  

^a MEIJO UNIVERSITY   (Japan)

^b KYOCERA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN LAYERS; DISLOCATION DENSITY; SAPPHIRE (0001) SUBSTRATES;

DISLOCATIONS (CRYSTALS); EPITAXIAL GROWTH; SAPPHIRE;

ALUMINUM NITRIDE;

EID: 33745021179     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200565389     Document Type: Article

References (4)

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3. M. Imura, K. Nakano, T. Kitano, T. Fuse, N. Fujimoto, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, T. Noro, and T. Takagi, 52nd JSAP 30p-L-10 (2005).
4. T. M. Katona, M. D. Craven, J. S. Speck, and S. P. DenBaars, Appl. Phys. Lett. 85, 1350 (2004).