Fabrication of aluminium nitride/diamond and gallium nitride/diamond SAW devices

Diamond and Related Materials

Volumn 8, Issue 2-5, 1999, Pages 309-313

  Chalker, P R ^a   Joyce, T B ^a   Johnston, C ^b   Crossley, J A A ^b   Huddlestone, J ^c   Whitfield, M D ^c   Jackman, R B ^c  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

^b RICARDO UK LTD   (United Kingdom)

^c UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

AlGaN; Chemical beam epitaxy; Diamond; Nitrides; Surface acoustic wave

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHEMICAL BEAM EPITAXY; CHEMICAL VAPOR DEPOSITION; DIAMONDS; FILM GROWTH; RAMAN SPECTROSCOPY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES; THIN FILM DEVICES;

ALUMINUM NITRIDE; GALLIUM NITRIDE;

ACOUSTIC SURFACE WAVE DEVICES;

EID: 0032614952     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(98)00263-5     Document Type: Article

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