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Journal of Crystal Growth

Volumn 230, Issue 3-4, 2001, Pages 426-431

Hexagonal AlN films grown on nominal and off-axis Si(0 0 1) substrates

(6) Lebedev, V a Jinschek, J a Krausslich J a Kaiser, U a Schroter B a Richter, W a

a FRIEDRICH SCHILLER UNIVERSITY JENA (Germany)

Author keywords

A1. Interfaces; A1. Nucleation; A3. Molecular beam epitaxy; B1. Nitrides

Indexed keywords

ALUMINUM NITRIDE; CRYSTAL ORIENTATION; FILM GROWTH; MOLECULAR BEAM EPITAXY; NUCLEATION; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SINGLE CRYSTALS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY;

EPITAXIAL ORIENTATION WURTZITE;

SEMICONDUCTING FILMS;

EID: 0035451870 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(01)01241-6 Document Type: Article

Times cited : (33)

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