Silicon out-diffusion and aluminum in-diffusion in devices with atomic-layer deposited La2O3 thin films

Applied Physics Letters

Volumn 93, Issue 19, 2008, Pages

  Jinesh, K B ^a   Lamy, Y ^a   Wolters, R A M ^a   Klootwijk, J H ^b   Tois, E ^c   Roozeboom, F ^a   Besling, W F A ^a  

^a NXP SEMICONDUCTORS   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c ASM Microchemistry Oy   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM; DEPTH PROFILING; DIFFUSION; ELECTROLYSIS; LANTHANUM; LANTHANUM ALLOYS; LEAKAGE CURRENTS; LIGHT METALS; MASS SPECTROMETRY; METAL INSULATOR BOUNDARIES; MIM DEVICES; MIS DEVICES; NITRIDES; NONMETALS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING; SILICON; THICK FILMS; TITANIUM; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

COORDINATION NUMBERS; DEVICE PERFORMANCES; LANTHANUM IONS; LANTHANUM OXIDES; TIME OF FLIGHT SECONDARY ION MASS SPECTROSCOPIES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 56249132097     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3025850     Document Type: Article

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