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Journal of Applied Physics

Volumn 106, Issue 10, 2009, Pages

Improved crystalline properties of laser molecular beam epitaxy grown SrTiO3 by rutile TiO2 layer on hexagonal GaN

(6) Luo, W B a Zhu, J a Chen, H a Wang, X P a Zhang, Y a Li, Y R a

a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE PROPERTIES; CRYSTALLINE QUALITY; CRYSTALLINE TEMPERATURE; DEPOSITION PROCESS; EPITAXIAL QUALITY; EPITAXIAL RELATIONSHIPS; GROWTH ORIENTATIONS; HEXAGONAL GAN; IN-SITU; LASER MOLECULAR BEAM EPITAXY; RUTILE TIO; SELECTED AREA ELECTRON DIFFRACTION; SRTIO; STO FILMS; STO THIN FILMS; TIO; XRD;

CRYSTAL GROWTH; CRYSTALLINE MATERIALS; ELECTRON DIFFRACTION; GALLIUM NITRIDE; LATTICE MISMATCH; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OXIDE MINERALS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM WIRES; STRONTIUM ALLOYS; TITANIUM OXIDES; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

GALLIUM ALLOYS;

EID: 71749119748 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3257259 Document Type: Article

Times cited : (20)

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