Molecular beam epitaxy of complex metal-oxides: Where have we come, where are we going, and how are we going to get there?

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 3, 2005, Pages 1272-1276

  Doolittle, W Alan ^a   Carver, Alexander G ^a   Henderson, Walter ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; GROWTH RATE; METAL-OXIDES;

COMPLEXATION; MOS DEVICES; PEROVSKITE; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SURFACE CHEMISTRY;

MOLECULAR BEAM EPITAXY;

EID: 31344465992     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1926294     Document Type: Conference Paper

References (22)

1. K. Ploog, A. Fischer, R. Trommer, and M. Hirose, J. Vac. Sci. Technol. 16, 290 (1979).
2. R. A. Stall, J. Vac. Sci. Technol. B 1, 135 (1983).
3. T. J. Maloney, J. Vac. Sci. Technol. B 1, 773 (1983).
4. R. A. Betts and C. W. Pitt, Electron. Lett. 21, 960 (1985).
5. S. Hosokawa and S. Ichimura, Rev. Sci. Instrum. 62, 1614 (1991).
6. C. D. Theis and D. G. Schlom, J. Vac. Sci. Technol. A 14, 2677 (1996).
7. D. G. Schlom, J. H. Haeni, J. Lettieri, C. D. Theis, W. Tian, J. C. Jiang, and X. Q. Pan, Mater. Sci. Eng., B 87, 281 (2001).
8. J. H. Haeni, C. D. Theis, D. G. Schlom, W. Tian, X. Q. Pan, H. Chang, I. Takeuchi, and X.-D. Xiang, Appl. Phys. Lett. 78, 3292 (2001).
9. R. A. McKee, F. J. Walker, and M. F. Chisholm, Phys. Rev. Lett. 81, 3014 (1998).
10. M. P. Warusawithana, E. V. Colla, J. N. Eckstein, and M. B. Weissman, Phys. Rev. Lett. 90, 036802 (2003).
11. H. Y. Huang, A. Ohtomo, N. Nakagawa, D. A. Muller, and J. L. Grazul, Physica E (Amsterdam) 22, 712 (2004).
12. D. G. Schlom and J. H. Haeni, MRS Bull. 27, 198 (2002).
13. W. Alan Doolittle, Alexander Carver, Gon Namkoong, and April S. Brown, Solid-State Electron. 47, 2143 (2003).
14. K. Ueda, T. Hase, H. Yanagi, H. Kawazoe, H. Hosono, H. Ohta, M. Orita, and M. Hirano, J. Appl. Phys. 89, 1790 (2001).
15. W. A. Doolittle, G. Namkoong, A. Carver, W. Henderson, and A. Brown, in Proceedings of the Materials Research Society Fall Meeting, Boston, MA, Dec. 2-6 (2002), Vol 743, L1.4.
16. S. M. Madison, W. Henderson, G. Namkoong, K. Lee, K. M. Patel, W. A. Doolittle, and S. E. Ralph, 2004 Digest of the IEEE Lasers and Electro-Optic Society (LEOS) Summer Topical Meetings (to be published).
17. Z. Sitar, F. Gitmans, and P. Gunther, Informacije MIDEM 24, 242 (1994).
18. D. Saulys, V. Joshkin, M. Khoudiakov, T. F. Kuech, A. B. Ellis, S. R. Oktyabrsky, and L. McCaughan, J. Cryst. Growth 217, 287 (2000).
19. Y. Kakehia, A. Okamotoa, Y. Sakuraia, Y. Nishikawaa, T. Yotsuyab, and S. Ogawaa, Appl. Surf. Sci. 169-170, 560 (2001).
20. Y. Song and F. W. Smith, Mater. Res. Soc. Symp. Proc. 742, 213 (2003).
21. Y. Song and F. W. Smith, Appl. Phys. Lett. 81, 3061 (2002).
22. K. W. Bryant and M. J. Bozack, Mater. Sci. Forum 338-342, 335 (2000).