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Volumn , Issue 1, 2002, Pages 554-557
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Structural properties of group III nitrides grown on SrTiO3 (111) substrates by pulsed laser deposition
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Author keywords
[No Author keywords available]
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Indexed keywords
ALUMINUM NITRIDE;
GALLIUM NITRIDE;
III-V SEMICONDUCTORS;
LATTICE MISMATCH;
NITRIDES;
PULSED LASER DEPOSITION;
PULSED LASERS;
REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;
SEMICONDUCTOR LASERS;
SEMICONDUCTOR QUANTUM WELLS;
STRONTIUM TITANATES;
STRUCTURAL PROPERTIES;
SUBSTRATES;
WIDE BAND GAP SEMICONDUCTORS;
X RAY DIFFRACTION ANALYSIS;
EPITAXIAL RELATIONSHIPS;
GROUP III NITRIDES;
HIGH-RESOLUTION X-RAY DIFFRACTION;
IN-PLANE ALIGNMENT;
LATTICE MATCHING;
SRTIO3 SUBSTRATES;
THERMAL CONTRACTION;
TITANIUM COMPOUNDS;
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EID: 2342638658
PISSN: 16101634
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1002/pssc.200390112 Document Type: Conference Paper |
Times cited : (10)
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References (14)
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