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Volumn , Issue 1, 2002, Pages 554-557

Structural properties of group III nitrides grown on SrTiO3 (111) substrates by pulsed laser deposition

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; LATTICE MISMATCH; NITRIDES; PULSED LASER DEPOSITION; PULSED LASERS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR LASERS; SEMICONDUCTOR QUANTUM WELLS; STRONTIUM TITANATES; STRUCTURAL PROPERTIES; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS; X RAY DIFFRACTION ANALYSIS;

EID: 2342638658     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390112     Document Type: Conference Paper
Times cited : (10)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.