Ferroelectric gate for control of transport properties of two-dimensional electron gas at AlGaNGaN heterostructures

Applied Physics Letters

Volumn 88, Issue 4, 2006, Pages 1-3

  Stolichnov, Igor ^a   Malin, Lisa ^a   Muralt, Paul ^a   Setter, Nava ^a  

^a EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; LEAD COMPOUNDS; POLARIZATION; THIN FILMS; TRANSPORT PROPERTIES;

FERROELECTRIC GATE; PARTIAL DEPLETION; SEMICONDUCTOR STRUCTURES;

ELECTRON GAS;

EID: 31544445814     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2168506     Document Type: Article

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