Ferroelectric properties of Bi3.25La0.75Ti 3O12 films using HfO2 as buffer layers for nonvolatile-memory field-effect transistors

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 5, 2008, Pages 1178-1181

  Kim, Kyoung Tae ^a   Kim, Gwan Ha ^a   Woo, Jong Chang ^a   Kim, Chang Ii ^a  

^a Chung Ang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER LAYERS; DATA STORAGE EQUIPMENT; DECOMPOSITION; FERROELECTRICITY; FIELD EFFECT TRANSISTORS; HAFNIUM; HAFNIUM COMPOUNDS; MICROSCOPIC EXAMINATION; OPTICAL WAVEGUIDES; SEMICONDUCTING SILICON COMPOUNDS; SILICON; STRUCTURAL METALS; STRUCTURAL PROPERTIES; THICK FILMS; THIN FILM DEVICES; THIN FILMS; TRANSISTORS; WINDOWS;

HF O2 LAYER; MEMORY WINDOWS;

ATOMIC LAYER DEPOSITION;

EID: 50849097838     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2960555     Document Type: Article

References (18)

1. J. F. Scott, Ferroelectric Memories (Springer, New York, 2000).
2. I. S. Kim, J. S. Song, S. H. Jeon, J. K. Chung, and W. J. Kim, J. Electr. Eng. Technol. 2, 9 (2007).
3. K. Nagashima, T. Hirai, H. Koike, Y. Fujisaki, and Y. Tarui, J. Appl. Phys. 35, 1680 (1996).
4. H. N. Lee, A. Visinoiu, S. Senz, C. Harnagea, A. Pignolet, D. Hesse, and U. Gösele, J. Appl. Phys. 88, 6658 (2000).
5. W. S. Kim, S. M. Ha, H. H. Park, and C. E. Kim, Thin Solid Films 355, 531 (1999).
6. B. H. Park, B. S. Kang, S. D. Bu, T. W. Noh, J. Lee, and W. Jo, Nature (London) 401, 682 (1999).
7. S. P. Nam, S. G. Lee, S. G. Bae, and Y. H. Lee, J. Electr. Eng. Technol. 2, 98 (2007).
8. B.-E. Park, K. Takahashi, and H. Ishiwara, Appl. Phys. Lett. 85, 4448 (2004).
9. H. S. Kim, S. A. Campbell, and D. C. Gilmer, IEEE Electron Device Lett. 18, 465 (1997).
10. D. Park, Y. C. King, Q. Lu, T. J. King, C. Hu, A. Kalnitsky, S. P. Tay, and C. C. Cheng, IEEE Electron Device Lett. 19, 441 (1998).
11. U. Ehrke, A. Sears, L. Alff, and D. Reisinger, Appl. Surf. Sci. 231, 598 (2004).
12. L. Manchanda, Tech. Dig.-Int. Electron Devices Meet. 1998, 605.
13. R. J. Gaboriaud, F. Paumier, F. Pailloux, and P. Guerin, Mater. Sci. Eng., B 109, 34 (2004).
14. B. H. Kee, K. Kang, W.-J. Qi, R. Nieh, Y. Jeon, K. Onishi, and J. C. Lee, Tech. Dig.-Int. Electron Devices Meet. 1999 149.
15. T. Ngai, W. J. Qi, R. Sharma, J. Fretwell, X. Chen, J. C. Lee, and S. Banerjee, Appl. Phys. Lett. 76, 502 (2000).
16. K. Aizawa, B.-E. Park, Y. Kawashima, K. Takahashi, and H. Ishiwara, Appl. Phys. Lett. 85, 3199 (2004).
17. D. S. Shin, H. N. Lee, Y. T. Kim, I. H. Choi, and B. H. Kim, Jpn. J. Appl. Phys., Part 1 37, 4373 (1998).
18. T. Yoshimura and N. Fujimura, Jpn. J. Appl. Phys., Part 1 42, 6011 (2003).