Heteroepitaxial ZnO nano hexagons on p-type SiC

Journal of Crystal Growth

Volumn 312, Issue 2, 2010, Pages 327-332

  Khranovskyy, V ^a   Tsiaoussis, I ^b   Yazdi, G R ^a   Hultman, L ^a   Yakimova, R ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b ARISTOTLE UNIVERSITY OF THESSALONIKI   (Greece)

Author keywords

A1. Crystal structure; A1. Interfaces; A1. Nanostructures; A3. Metalorganic chemical vapor deposition; B3. Light emitting diodes

Indexed keywords

4H-SIC SUBSTRATE; A1. CRYSTAL STRUCTURE; A1. NANOSTRUCTURES; A3.METALORGANIC CHEMICAL VAPOR DEPOSITION; AS-GROWN; ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR DEPOSITION; CATALYST-FREE; EPITAXIAL RELATIONS; GROWTH DIRECTIONS; HETEROEPITAXIAL; MATRIX; P-TYPE SI; P-TYPE SIC; SCANNING AND TRANSMISSION ELECTRON MICROSCOPY; UV EMISSIONS; ZNO; ZNO SINGLE CRYSTALS;

ATMOSPHERIC PRESSURE; EPITAXIAL GROWTH; LIGHT; LIGHT EMITTING DIODES; LUMINESCENCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SILICON CARBIDE; SILICON WAFERS; SINGLE CRYSTALS; SULFUR COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; ZINC OXIDE;

CRYSTAL STRUCTURE;

EID: 71649114681     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.09.057     Document Type: Article

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