Step-bunching in 6H-SiC growth by sublimation epitaxy

Journal of Physics Condensed Matter

Volumn 11, Issue 49, 1999, Pages 10019-10024

  Syvajarvi M ^a   Yakimova, R ^a,b   Janzen E ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b Okmetic AB   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 2942637017     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/11/49/319     Document Type: Article

References (8)

1. Syväjärvi M, Yakimova R, Tuominen M, Kakanakova-Georgieva A, MacMillan M F, Henry A, Wahab Q and Janzén E 1999 J. Crystal Growth 197 155
2. Kimoto T, Miyamoto N, and Matsunami H 1998 European Conference on Silicon Carbide and Related Materials '98 (Montpellier, 1998) H-4
3. Kimoto T, Itoh A and Matsunami H 1995 Appl. Phys. Lett. 66 3645
4. Tyc S 1996 (Inst. Phys. Conf. Ser. 137) (Bristol: Institute of Physics) p 333
5. Kimoto T, Itoh A, Matsunami H and Okano T 1997 J. Appl. Phys. 81 3494
6. Tiller W A 1990 The Science of Crystallization: Microscopical Interfacial Phenomena (Cambridge: Cambridge University Press)
7. Syväjärvi M, Yakimova R and Janzén E 1999 J. Electrochem. Soc. 146 1565
8. Kimoto T 1999 private discussion