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Volumn 209, Issue 2-3, 2000, Pages 537-541

Defect characterization in epitaxial ZnO/epi-GaN/Al2O3 heterostructures: Transmission electron microscopy and triple-axis X-ray diffractometry

(4) Hong, Soon Ku a Ko, Hang Ju a Chen, Yefan a Yao, Takafumi a

a TOHOKU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; CRYSTAL ORIENTATION; DISLOCATIONS (CRYSTALS); INTERFACES (MATERIALS); NITRIDES; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY CRYSTALLOGRAPHY; ZINC OXIDE;

GALLIUM NITRIDE;

HETEROJUNCTIONS;

EID: 0034140454 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(99)00615-6 Document Type: Article

Times cited : (50)

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