High-quality ZnO layers grown on 6H-SiC substrates by metalorganic chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 3, 2004, Pages 1114-1117

  Ashrafi, A B M Almamun ^a   Zhang, Bao Ping ^a   Binh, Naguyen Thanh ^a   Wakatsuki, Kazuki ^a   Segawa, Yusaburo ^a  

^a RIKEN   (Japan)

Author keywords

Crystalline quality; Free exciton emission; Lattice mismatches; Substrates for Zno epitaxy

Indexed keywords

BINDING ENERGY; CRYSTALLINE MATERIALS; EXCITONS; HYDROGEN; LATTICE CONSTANTS; MAPPING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; OPTIMIZATION; PHOTOLUMINESCENCE; QUANTUM THEORY; SAMPLING; X RAY DIFFRACTION; ZINC OXIDE;

CRYSTALLINE QUALITY; FREE EXCITON EMISSION; LATTICE MISMATCHES; SUBSTRATES FOR ZNO EPITAXY;

SILICON CARBIDE;

EID: 2342529638     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1114     Document Type: Article

References (20)

1. T. Makino, Y. Segawa, M. Kawasaki, A. Ohtomo, R. Shiroki, K. Tamura, T. Yasuda and H. Koinuma: Appl. Phys. Lett. 78 (2001) 1237.
2. P. Bhattacharya, R. R. Das and R. S. Katiyar: Appl. Phys. Lett. 83 (2003) 2010.
3. H. D. Shun, T. Makino, Y. Segawa, M. Kawasaki, A. Ohtomo, K. Tamura and H. Koinuma: J. Appl. Phys. 91 (2002) 1993.
4. M. Zamfirescu, A. Kavokin, B. Gil, G. Malpuech and M. Kaliteevski: Phys. Rev. B 65 (2002) 161205.
5. H. T. Ng, B. Chen, J. Li, M. Meyyappan, J. Wu, S. X. Li and E. E. Haller: Appl. Phys. Lett. 82 (2003) 2023.
6. B. P. Zhang, Y. Segawa, K. Wakatsuki, Y. Kashiwaba and K. Haga: Appl. Phys. Lett. 79 (2001) 3953.
7. E. S. Hellman: J. Nitride Semicond. Res. 3 (1998) 11.
8. V. Chamard, T. H. Metzger, E. B. Amalric, B. Daudin, C. Adalmann, H. Mariette and G. Mula: Appl. Phys. Lett. 79 (2001) 1971.
9. S. Limppijumnong and W. R. L. Lambrecht: Phys. Rev. B 63 (2001) 104103.
10. A. B. M. A. Ashrafi, I. Suemune, H. Kumano, Y. W. Ok and T. Y. Seong: Appl. Phys. Lett. 76 (2000) 550.
11. A. B. M. A. Ashrafi, I. Suemune, H. Kumano, Y. W. Ok and T. Y. Seong: Inst. Phys. Conf. Ser. 170 (2001) 307.
12. B. P. Zhang, L. H. Manh, K. Wakatsuki, T. Ohnishi, M. Lippmaa, N. Usami, M. Wakasaki and Y. Swgawa: Jpn. J. Appl. Phys. 42 (2003) 2291.
13. P. Fons, K. Iwata, A. Yamada, K. Matsubara and S. Niki: Appl. Phys. Lett. 77 (2000) 1801.
14. K. Ogata, S. W. Kim, Sz. Fujita and Sg. Fujita: J. Cryst. Growth 240 (2002) 112.
15. D. W. Hamby, D. A. Lucca, M. J. Kolpfstein and G. Cantwell: J. Appl. Phys. 93 (2003) 3214.
16. J. F. Rommeluere, L. Svob, F. Jomard, J. M. Arroyo, A. Lusson, V. Sallet and Y. Marfaing: Appl. Phys. Lett. 83 (2003) 287.
17. A. B. M. A. Ashrafi, I. Suemune and H. Kumano: Jpn. J. Appl. Phys. 41 (2002) 2851.
18. S. Bethke, H. Pan and B. W. Wessels: Appl. Phys. Lett. 52 (1988) 138.
19. G. Popovici, W. Kim, A. Botchkarev, H. Tang and H. Morkoc: Appl. Phys. Lett. 71 (1997) 3385.
20. M. E. Lin, S. Strite, A. Agawal, A. Salvador, G. L. Zhou, N. Teraguchi, A. Rockett and H. Morkoc: Appl. Phys. Lett. 62 (1993) 702.