Dry-etching properties of TiN for metal/high-k gate stack using BCl 3-based inductively coupled plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 27, Issue 6, 2009, Pages 1320-1325

  Kim, Dong Pyo ^a   Yang, Xue ^a   Woo, Jong Chang ^a   Um, Doo Seung ^a   Kim, Chang Il ^a  

^a Chung Ang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AR PLASMAS; CHEMICAL PATHWAYS; DC BIAS VOLTAGE; DIFFERENT SUBSTRATES; DIRECT-CURRENT; ETCH RATES; HIGH MELTING POINT; METAL/HIGH-K GATE; NON-VOLATILE; PLASMA PARAMETER; RADIO FREQUENCY POWER; RATE BEHAVIOR; RF-POWER; SUBSTRATE TEMPERATURE; TIN FILMS; VOLUME DENSITY;

BIAS VOLTAGE; EMISSION SPECTROSCOPY; FLOW RATE; INDUCTIVELY COUPLED PLASMA; ION BOMBARDMENT; MELTING POINT; METALLIC FILMS; OPTICAL EMISSION SPECTROSCOPY; PLASMA DEVICES; SUBSTRATES; TITANIUM COMPOUNDS; TITANIUM NITRIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 71049134423     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3244567     Document Type: Article

References (21)

1. D. A. Buchanan, IBM J. Res. Dev. 43, 245 (1999).
2. C.-I. Hsieh, T.-M. Pan, J.-C. Lin, Y.-B. Peng, T.-Y. Huang, D.-R. We, and S. Shich, Appl. Surf. Sci. 255, 3769 (2009). 10.1016/j.apsusc.2008.10.048
3. M. Lukosius, C. Wegner, S. Pasko, H.-J. Mussig, B. Sitzinger, and C. Lohe, Chem. Vap. Deposition 14, 123 (2008). 10.1002/cvde.200806695
4. L. Manchanda, Tech. Dig.-Int. Electron Devices Meet. 1998, 605.
5. R. J. Gaboriaud, F. Paumier, F. Pailloux, and P. Guerin, Mater. Sci. Eng., B 109, 34 (2004). 10.1016/j.mseb.2003.10.023
6. D. Wilk, J. Appl. Phys. 89, 5243 (2001). 10.1063/1.1361065
7. J. Tonotani, T. Iwamoto, F. Sato, K. Hattori, S. Ohmi, and H. Iwai, J. Vac. Sci. Technol. B 21, 2163 (2003). 10.1116/1.1612517
8. P. Czuprynski, O. Joubert, L. Vallier, and N. Sadeghi, J. Vac. Sci. Technol. A 17, 2572 (1999). 10.1116/1.581998
9. S. R. Min, H. N. Cho, Y. L. Li, S. K. Lim, S. P. Choi, and C. W. Chung, J. Ind. Eng. Chem. (Seoul, Repub. Korea) 14, 297 (2008).
10. S. J. Pearton, A. Katz, and A. Feingold, Semicond. Sci. Technol. 6, 830 (1991). 10.1088/0268-1242/6/8/022
11. F. Fracassi, R. D'gostino, R. Lamendola, and I. Mangieri, J. Vac. Sci. Technol. A 13, 335 (1995). 10.1116/1.579419
12. S. Miyaji, T. Kato, and T. Yamauchi, J. Vac. Sci. Technol. A 14, 3082 (1996). 10.1116/1.580175 (Pubitemid 126157161)
13. W. S. Hwang, J. Chen, W. J. Yoo, and V. Bliznetsov, J. Vac. Sci. Technol. A 23, 964 (2005). 10.1116/1.1927536 (Pubitemid 43119234)
14. A. M. Efremov, D. P. Kim, and C. I. Kim, Vacuum 75, 237 (2004). 10.1016/j.vacuum.2004.03.005
15. E. Meeks, P. Ho, A. Ting, and R. J. Buss, J. Vac. Sci. Technol. A 16, 2227 (1998). 10.1116/1.581332 (Pubitemid 128106767)
16. A. M. Efremov, S. M. Koo, D. P. Kim, K. T. Kim, and C. I. Kim, J. Vac. Sci. Technol. A 22, 2101 (2004). 10.1116/1.1772370
17. G. H. Kim, C. I. Kim, and A. M. Efremov, Vacuum 79, 231 (2005). 10.1016/j.vacuum.2005.03.012 (Pubitemid 41014066)
18. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bombe, in Handbook of X-ray Photoelectron Spectroscopy, edited by, J. Chastain, (Perkin-Elmer, Eden Prairie, MN, 1992).
19. N. Jiang, H. J. Zhang, S. N. Bao, Y. G. Shen, and Z. F. Zhou, Physica B 352, 118 (2004). 10.1016/j.physb.2004.07.001
20. Handbook of Chemistry and Physics, 85th ed., edited by, D. R. Lide, (CRC, Boca Raton, FL, 2004)
21. K. B. Jung, H. Cho, K. P. Lee, J. Marburger, F. Sharifi, R. K. Singh, D. Kumar, K H. Dahmen, and S. J. Pearton, J. Vac. Sci. Technol. B 17, 3186 (1999). 10.1116/1.590977