Investigation of etching properties of metal nitride/high-k gate stacks using inductively coupled plasma

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 23, Issue 4, 2005, Pages 964-970

  Hwang, Wan Sik ^a   Chen, Jinghao ^a   Yoo, Won Jong ^a   Bliznetsov, Vladimir ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BYPRODUCTS; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; EVAPORATION; GIBBS FREE ENERGY; HAFNIUM COMPOUNDS; INDUCTIVELY COUPLED PLASMA; LIGHT EMISSION; MASKS; PLASMA ETCHING; SILICA; TANTALUM COMPOUNDS; TITANIUM NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

ETCH RATES; EVAPORATION TEMPERATURE; GATE STACKS;

GATES (TRANSISTOR);

EID: 31044439269     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1927536     Document Type: Conference Paper

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