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Applied Surface Science

Volumn 255, Issue 6, 2009, Pages 3769-3772

Structural properties of Al 2 O 3 dielectrics grown on TiN metal substrates by atomic layer deposition

(7) Hsieh, Chun I a Pan, Tung Ming b Lin, Jian Chyi b Peng, Yan Bo b Huang, Tsai Yu a Wu, Chang Rong a Shih, Steven a

a NANYA TECHNOLOGY CORPORATION (Taiwan)

b CHANG GUNG UNIVERSITY (Taiwan)

Author keywords

Al 2 O 3 dielectrics; H 2 O; O 3; TiN metal substrate; TiO 2

Indexed keywords

ALUMINA; ALUMINUM COATINGS; ALUMINUM OXIDE; ATOMIC FORCE MICROSCOPY; ATOMIC LAYER DEPOSITION; CARBON FILMS; DIELECTRIC MATERIALS; HIGH-K DIELECTRIC; OXIDANTS; STRUCTURAL PROPERTIES; SUBSTRATES; TIN; TITANIUM DIOXIDE; TITANIUM NITRIDE; X RAY DIFFRACTION;

CARBON AND HYDROGENS; METAL SUBSTRATE; MORPHOLOGICAL FEATURES; OXIDATION POTENTIALS; RAPID DIFFUSION; TIO2; TIO2 FILM;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 57849115832 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2008.10.048 Document Type: Article

Times cited : (4)

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