Strain relaxation of epitaxial SiGe layers on Si(100) improved by hydrogen implantation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 29-34

  Mantl, S ^a   Hollander B ^a   Liedtke, R ^a   Masters, S ^a   Herzog, H J ^b   Kibbel, H ^b   Hackbarth, T ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b DAIMLER AG   (Germany)

Author keywords

Bubbles; Cavities; Molecular beam epitaxy; SiGe; Strain relaxation

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); HYDROGEN; MOLECULAR BEAM EPITAXY; NUCLEATION; RELAXATION PROCESSES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

DISLOCATION LOOP; EPITAXIAL LAYER; STRAIN RELAXATION;

ION IMPLANTATION;

EID: 0032714773     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00601-6     Document Type: Article

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