3C-SiC monocrystals grown on undulant Si(001) substrates

Materials Research Society Symposium - Proceedings

Volumn 742, Issue , 2002, Pages 47-58

  Nagasawa, Hiroyuki ^a   Yagi, Kuniaki ^a   Kawahara, Takamitsu ^a   Hatta, Naoki ^a  

^a HOYA Advanced Semiconductor Technologies Co Ltd   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; EPITAXIAL GROWTH; MONOLAYERS; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

ANTI-PHASE BOUNDARIES;

SILICON CARBIDE;

EID: 0038518579     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-742-k1.6     Document Type: Conference Paper

References (15)

1. W.E.Nelson, F.A.Halden and A.Rosengreen, J.Appl.Phys. 37, 333 (1966).
2. N.N.Long, D.S. Nedzvetskii, N.K.Prokofeva and M.B.Riefman, Opt.Spectrosc. 29, 388 (1970).
3. G.Pensl, M.Bassler, F.Ciobanu, V.Afanas'ev, H.Yano, T.Kimoto and H.Matsunami, Mat.Res.Soc.Symp.Proc, 640, H3.2 (2001).
4. H.Nagasawa and K.Yagi, Phys.Stat.Sol.(b) 202, 335 (1997).
5. A.J.Fleischman, C.A.Zonnan, M.Mehregany, C.Jacob, S.Nishino and P.Pirouz, Inst.Phys.Conf.Ser. No.142, 197 (Paper presented at Silicon Carbide and Related Materials 1995 Conf., Kyoto, Japan).
6. H. Iwata, U. Lindefelt, S. Oberg, P. Briddon, Mater. Sci. Forum, 389-393, 439 (2002).
7. Y.Irokawa, M.Kodama and T.Kachi, J.Electrochem.Soc. 148, G680 (2001).
8. O.Kordina, L.-O.Bjorketun, A.Henry, C.Hallin, R.C.Glass, L.Hultman, J.-E.Sundgren and E.Janzen, J.Cryst.Growth 154, 303 (1995).
9. H.N.Jayatirtha, M.G.Spencer, C.Taylor, W.Greg, J. Cryst. Growth, 174, 662 (1997).
10. W.Lambrecht and B.Segall, Phys.Rev. B41, 2948 (1990).
11. K.Shibahara, S.Nishino and H.Matsunami, J.Cryst.Growth, 78, 538 (1986).
12. H.Nagasawa, K.Yagi and T.Kawahara, J.Cryst.Growth, 237-239, 1244 (2002).
13. H.Iwata, U.Lindefelt, S.Oberq and P.R.Briddon, Presented at ECSCRM2002 Linkoping, Sweden, 2002 (to be published in Matr.Sci.Forum, 2003).
14. N.Hatta, K.Yagi, T.Kawahara and H.Nagasawa, Presented at ECSCRM2002 Linkoping, Sweden, 2002 (to be published in Matr.Sci.Forum, 2003).
15. H.Nagasawa, T.Kawahara, K.Yagi, Matr.Sci.Forum, 389-393,319 (2002).