MBE growth of SiGe with high Ge content for optical applications

Applied Surface Science

Volumn 254, Issue 19, 2008, Pages 6238-6241

  Oehme, M ^a   Werner, J ^a   Kirfel, O ^a   Kasper, E ^a  

^a UNIVERSITY OF STUTTGART   (Germany)

Author keywords

MBE; Microelectronics; Optoelectronic devices; Photodetectors

Indexed keywords

GERMANIUM; MICROELECTRONICS; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SILICON;

CONTACT LAYERS; DOPING CONCENTRATION; DOPING STRATEGIES; GERMANIUM DETECTOR; GROWTH METHOD; OPTICAL APPLICATIONS; SHARP TRANSITION; VIRTUAL SUBSTRATES;

SI-GE ALLOYS;

EID: 45049083180     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.128     Document Type: Article

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