MBE growth of GaN on MgO substrate

Journal of Crystal Growth

Volumn 301-302, Issue SPEC. ISS., 2007, Pages 478-481

  Suzuki, Ryotaro ^a   Kawaharazuka, Atsushi ^a   Horikoshi, Yoshiji ^a  

^a WASEDA UNIVERSITY   (Japan)

Author keywords

A1. Crystal structure; A1. Photoluminescence; A1. X ray diffraction; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

CRYSTALLIZATION; EPITAXIAL FILMS; GROWTH (MATERIALS); MAGNESIA; MOLECULAR BEAM EPITAXY; SURFACE MORPHOLOGY;

CRYSTALLINE QUALITY; HEXAGONAL PHASES; MAGNESIA SUBSTRATES; RECIPROCAL SPACE MAPPING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 33947329150     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.095     Document Type: Article

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