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Volumn 256, Issue 2, 2009, Pages 480-483
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Ga-induced superstructures on the Si(1 1 1) 7 × 7 surface
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Author keywords
AES; EELS; Ga; LEED; Si(1 1 1)
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Indexed keywords
ADSORPTION;
AUGER ELECTRON SPECTROSCOPY;
DESORPTION;
ELECTRON ENERGY LEVELS;
ELECTRON ENERGY LOSS SPECTROSCOPY;
ELECTRON SCATTERING;
ELECTRONIC PROPERTIES;
ELECTRONS;
ENERGY DISSIPATION;
ENVIRONMENTAL DESIGN;
III-V SEMICONDUCTORS;
ION BOMBARDMENT;
MONOLAYERS;
NANOSTRUCTURES;
OPTOELECTRONIC DEVICES;
BONDING CONFIGURATIONS;
DESORPTION DYNAMICS;
ELECTRON CONFINEMENT;
INTERFACE EVOLUTION;
SI (1 1 1);
STRANSKI-KRASTANOV GROWTH MODE;
STRUCTURAL ARRANGEMENT;
ULTRAHIGH VACUUM CONDITIONS;
GALLIUM;
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EID: 70449526168
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2009.07.036 Document Type: Article |
Times cited : (15)
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References (25)
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