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Volumn 256, Issue 2, 2009, Pages 480-483

Ga-induced superstructures on the Si(1 1 1) 7 × 7 surface

Author keywords

AES; EELS; Ga; LEED; Si(1 1 1)

Indexed keywords

ADSORPTION; AUGER ELECTRON SPECTROSCOPY; DESORPTION; ELECTRON ENERGY LEVELS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON SCATTERING; ELECTRONIC PROPERTIES; ELECTRONS; ENERGY DISSIPATION; ENVIRONMENTAL DESIGN; III-V SEMICONDUCTORS; ION BOMBARDMENT; MONOLAYERS; NANOSTRUCTURES; OPTOELECTRONIC DEVICES;

EID: 70449526168     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.07.036     Document Type: Article
Times cited : (15)

References (25)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.