Surface passivation of GaAs by ultra-thin cubic GaN layer

Applied Surface Science

Volumn 159, Issue , 2000, Pages 456-461

  Anantathanasarn, Sanguan ^a   Ootomo, Shin Ya ^a   Hashizume, Tamotsu ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; IRRADIATION; MOLECULAR BEAM EPITAXY; PASSIVATION; PHOTOLUMINESCENCE; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR PLASMAS; STOICHIOMETRY; ULTRATHIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0034207139     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00077-5     Document Type: Article

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