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Volumn 255, Issue 15, 2009, Pages 6802-6805
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Epitaxial SiC formation induced by medium energy ions on Si(1 1 1) at room temperature
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Author keywords
Ion beam induced reactions; Reaction threshold; Silicon carbide; X ray photoelectron spectroscopy
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Indexed keywords
FORWARD SCATTERING;
ION BEAMS;
IONS;
PHOTOELECTRONS;
PHOTONS;
SILICON CARBIDE;
ANGLE-DEPENDENT;
INSULATOR PHASE;
ION SPUTTERING;
LAYER FORMATION;
PROOF OF CONCEPT;
REACTION THRESHOLDS;
SIC FORMATION;
SILICON TECHNOLOGIES;
X RAY PHOTOELECTRON SPECTROSCOPY;
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EID: 67349198872
PISSN: 01694332
EISSN: None
Source Type: Journal
DOI: 10.1016/j.apsusc.2009.02.075 Document Type: Article |
Times cited : (12)
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References (20)
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