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Volumn 255, Issue 15, 2009, Pages 6802-6805

Epitaxial SiC formation induced by medium energy ions on Si(1 1 1) at room temperature

Author keywords

Ion beam induced reactions; Reaction threshold; Silicon carbide; X ray photoelectron spectroscopy

Indexed keywords

FORWARD SCATTERING; ION BEAMS; IONS; PHOTOELECTRONS; PHOTONS; SILICON CARBIDE;

EID: 67349198872     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.02.075     Document Type: Article
Times cited : (12)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.