Electronic structure of GaN(0 0 0 1̄)-(1 × 1) surface

Surface Science

Volumn 548, Issue 1-3, 2004, Pages 220-230

  Kowalski, B J ^a   Iwanowski, R J ^a   Sadowski, J ^a,b,c   Kowalik, I A ^a   Kanski, J ^c   Grzegory, I ^d   Porowski, S ^d  

^a INSTITUTE OF PHYSICS   (Poland)

^b UNIVERSITY OF COPENHAGEN   (Denmark)

^c CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^d INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

Author keywords

Angle resolved photoemission; Gallium nitride; Low index single crystal surfaces; Surface electronic phenomena (work function, surface potential, surface states, etc.)

Indexed keywords

ANNEALING; BAND STRUCTURE; DEPOSITION; ELECTRONIC STRUCTURE; MOLECULAR BEAM EPITAXY; PHOTOEMISSION; SINGLE CRYSTALS; SPECTROSCOPIC ANALYSIS; SPUTTERING; SURFACE CHEMISTRY;

PHOTOEMISSION SPECTROSCOPY; SURFACE POTENTIAL; WORK FUNCTIONS;

GALLIUM NITRIDE;

EID: 0346991615     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2003.11.010     Document Type: Article

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